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ADM8P03S |
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| Part Number | ADM8P03S |
| Manufacturer | ADV |
| Description | ADV ADM8P03S P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -30V ID -9.1A RDS(ON) (mΩ) 20mΩ SOP-8 S D S D S D G D Absolute Maximum Ratings ( TA = 2... |
| Features |
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250uA
-30
IDSS
Zero Gate Voltage Drain Current
VDS= -30V, VGS=0V
--
VDS=-30V,VGS=0V TJ=125°C
--
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=-250uA
-1
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
--
RDS(ON)
Drain-SourceOn-stateResistance⑵ VGS= -10V, IDS=-9.1A
--
VGS= -4.5V, IDS=-6.9A
--
--
--
V
--
1
uA
--
10
-1.3
-3
V
-- ±100 nA
15
20
20
35
m
Dynamic Characteristics... |
| Document |
 ADM8P03S Data Sheet
PDF 236.63KB |
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Desde 2024. D4U Semiconductor.
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