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ADM3N06B |
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| Part Number | ADM3N06B |
| Manufacturer | ADV |
| Description | ADV ADM3N06B N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 3.0A RDS(ON) (mΩ) 105mΩ SOT-23 Absolute Maximum Ratings ( TA = 25°C unless otherwise specified ) Sy... |
| Features |
DSS
Zero Gate Voltage Drain Current
VGS(th) IGSS RDS(ON)
Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵
VGS=0V, IDS=250uA VDS= 60V, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=3A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS= 3V, Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
tr
Turn-on Rise Time⑴
td(OFF)
Turn-off Delay Time⑴
tf
Turn-off Fall Time⑴
Qg
Total Gate Charge⑴
Qgs
Gate-Source Charge⑴
Qgd
Gate-Drain C... |
| Document |
 ADM3N06B Data Sheet
PDF 860.19KB |
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