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ADM12P03S |
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| Part Number | ADM12P03S |
| Manufacturer | ADV |
| Description | ADV ADM12P03S P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -30V ID -12A RDS(ON) (mΩ) 14mΩ SOP-8 S D S D S D G D Absolute Maximum Ratings ( TA = 2... |
| Features |
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250uA
-30
IDSS
Zero Gate Voltage Drain Current
VDS= -30V, VGS=0V
--
VDS=-30V,VGS=0V TJ=125°C
--
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=-250uA
-1
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
--
RDS(ON)
Drain-SourceOn-stateResistance⑵ VGS= -10V, IDS=-12A
--
VGS= -4.5V, IDS=-8.5A
--
gFS
Forward transconductance⑵
VDS=- 10V, IDS=-7A
--
--
--
V
--
1
uA
--
10
-1.3
-3
V
--... |
| Document |
 ADM12P03S Data Sheet
PDF 236.79KB |
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Desde 2024. D4U Semiconductor.
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