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| Part Number | 2SD2012 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2012 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and s. |
| Features | tion voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 100 20 MIN 60 www.datasheet4u.com 2SD2012 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 . |
| Part Number | 2SD2012 |
| Manufacturer | MCC |
| Title | NPN Silicon Power Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • High DC Current Gain: hFE(1) =100 (Min.) • Low Saturation Voltage: VCE(sat)=1.0V (Max.) • High Power Dissipation: PC=25W (TC=2. |
| Features |
• High DC Current Gain: hFE(1) =100 (Min.) • Low Saturation Voltage: VCE(sat)=1.0V (Max.) • High Power Dissipation: PC=25W (TC=25OC) • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating •MaMxoimisuuremSRenastitiinvigtysLevel 1 • Mounting Torgue: 5 in-lbs Maximum Symbol Rating Rating Unit VCEO C. |
| Part Number | 2SD2012 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics . |
| Features | olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current. |
| Part Number | 2SD2012 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applicatio. |
| Features | d SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V ; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V ; IC=0 0.1 mA hFE-1 DC Current Gain IC= 0.5A . |
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| 4 | 2SD2014 |
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| 5 | 2SD2014 |
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| 6 | 2SD2014 |
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| 7 | 2SD2015 |
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| 8 | 2SD2015 |
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| 9 | 2SD2015 |
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| 10 | 2SD2016 |
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Desde 2024. D4U Semiconductor.
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