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| Part Number | 2SD2015 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2015 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER . |
| Features | Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A ;IB=2mA IC=2A ;IB=2mA VCB=150V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=2V IC=0.1A ; VCE=12V f=1MHz;VCB=10V 2000 MIN 120 www.datasheet4u.com 2SD2015 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 1.5 2.0 10 10 V V µA mA 40 40 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=. |
| Part Number | 2SD2015 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for dri. |
| Features | PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 2V fT Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V . |
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