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| Part Number | 2SD2014 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2014 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | 2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V V. |
| Features |
3.9 ±0.2 0.8±0.2
13.0min
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No. b. Lot No.
Collector Current IC(A) IB=20mA
I C – V CE Characteristics (Typical) 4 1.0mA 0.8mA 3 0.6mA 0.5mA 2 0.4mA 1 0.3mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) Collector C. |
| Part Number | 2SD2014 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·DARLINGTON ·Complement to type 2SB1257 APPLICATIONS ·Driver for solenoid,relay and motor, series regulator,and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYM. |
| Features | rrent Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=3mA IC=3A ;IB=3mA VCB=120V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=2V IE=-0.1A ; VCE=12V f=1MHz;VCB=10V 2000 MIN 80 www.datasheet4u.com 2SD2014 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 1.5 2.0 10 10 V V µA mA 75 45 MHz pF Switching times ton . |
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Desde 2024. D4U Semiconductor.
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