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2SD2012 |
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| Part Number | 2SD2012 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM... |
| Features |
CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
IEBO
Emitter Cut-off Current (IC = 0)
V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0)
VCE(sat)∗ Collector-Emitter Saturation Voltage
VCB = 60 V VEB = 7 V IC = 50 mA
IC = 2 A
IB = 0.2 A
VBE∗ Base-Emitter Voltage IC = 0.5 A
VCE = 5 V
hFE∗ DC Current Gain
IC = 0.5 A IC = 2 A
VCE = 5 V VCE = 5 V
fT
Transition frequency VCE = 5 V
IC = 0.5 A
CCBO Collector-Base
VCB = 10 V IE = 0
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2... |
| Document |
 2SD2012 Data Sheet
PDF 126.59KB |
Desde 2024. D4U Semiconductor.
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