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2SD2012 |
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| Part Number | 2SD2012 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
d
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
1.0
V
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 60V ; IE=0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 7V ; IC=0
0.1 mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
100
320
hFE-2
DC Current Gain
IC= 2A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
3
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
35
pF
NOT... |
| Document |
 2SD2012 Data Sheet
PDF 205.20KB |
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