Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD2016 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2016 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter, relay a. |
| Features | Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1.5mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V COB Output Capacitance VCB=. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD201 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD201 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2010 |
ROHM |
NPN Transistor |
|
| 4 | 2SD2012 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SD2012 |
STMicroelectronics |
NPN Silicon Power Transistor |
|
| 6 | 2SD2012 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD2012 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD2012 |
MCC |
NPN Silicon Power Transistors |
|
| 9 | 2SD2014 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SD2014 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|