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| Part Number | 2SD1412 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1412 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplif. |
| Features | R)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 4A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1410 |
Toshiba |
NPN Transistor |
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| 2 | 2SD1410 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
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| 3 | 2SD1410A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1411 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD1411 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1411A |
Toshiba Semiconductor |
NPN Transistor |
|
| 8 | 2SD1412A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD1413 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1414 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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