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| Part Number | 2SD1410 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1410 |
| Manufacturer | Toshiba |
| Title | NPN Transistor |
| Description | 2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base . |
| Features | . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RA. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1410A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD1411 |
Toshiba |
NPN Transistor |
|
| 3 | 2SD1411 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1411A |
Toshiba Semiconductor |
NPN Transistor |
|
| 6 | 2SD1412 |
Toshiba |
NPN Transistor |
|
| 7 | 2SD1412 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 8 | 2SD1412A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD1413 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1414 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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