Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD1414 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1414 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to Type 2SB1024 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP. |
| Features | RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 20 μA IEBO Emitter Cutoff Current VEB= 5V. |
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| 8 | 2SD1412 |
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| 9 | 2SD1412 |
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| 10 | 2SD1412A |
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Desde 2024. D4U Semiconductor.
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