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| Part Number | 2SD1411 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1411 |
| Manufacturer | Toshiba |
| Title | NPN Transistor |
| Description | : 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base V. |
| Features | . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic 80 Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB 2.0 30 1. BASE 2. COLLECTOR 3 EMITTER Junction Tempera. |
| Part Number | 2SD1411 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage. |
| Features | ain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=4A ;IB=0.4A IC=4A ;IB=0.4A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V VCE=4V;IC=1A f=1MHz ; VCB=10V;IE=0 70 30 MIN 80 www.datasheet4u.com 2SD1411 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.25 0.9 0.5 1.4 5 5 240 V V µA µA 10 250 MHz pF Switch. |
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| 1 | 2SD1410 |
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| 2 | 2SD1410 |
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| 3 | 2SD1410A |
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| 4 | 2SD1411A |
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| 6 | 2SD1412 |
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| 7 | 2SD1412A |
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| 9 | 2SD1414 |
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| 10 | 2SD1414 |
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