2SD1410 Toshiba NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD1410

Toshiba
2SD1410
2SD1410 2SD1410
zoom Click to view a larger image
Part Number 2SD1410
Manufacturer Toshiba (https://www.toshiba.com/)
Description 2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL ...
Features . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO 300 VcEO 250 Vebo 5 ic 6 IB PC T J T stg 1 2.0 25 150 -55-150 COLLECTOR UNIT V V V A A W °C °C 1 1. BASE 2. COLLECTOR 3. EMITTER TOSHIBA 2-10L1A Weight : 2.1g ELECTRICAL CHA...

Document Datasheet 2SD1410 Data Sheet
PDF 89.38KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD1410
INCHANGE
Silicon NPN Darlington Power Transistor Datasheet
2 2SD1410A
Toshiba Semiconductor
Silicon NPN Transistor Datasheet
3 2SD1411
Toshiba
NPN Transistor Datasheet
4 2SD1411
INCHANGE
NPN Transistor Datasheet
5 2SD1411
SavantIC
SILICON POWER TRANSISTOR Datasheet
6 2SD1411A
Toshiba Semiconductor
NPN Transistor Datasheet
More datasheet from Toshiba
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad