2SD1410 |
Part Number | 2SD1410 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | 2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL ... |
Features |
. High DC Current Gain : hFE=2000(Min. ) (Vce=2V,
Ic=2A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX. 03.2±Q2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
EQUIVALENT CIRCUIT
BASE o-
I lyvv
SYMBOL RATING
VCBO
300
VcEO
250
Vebo
5
ic 6
IB PC
T
J
T stg
1
2.0 25
150
-55-150
COLLECTOR
UNIT V V V A A W
°C °C
1
1. BASE 2. COLLECTOR 3. EMITTER
TOSHIBA
2-10L1A
Weight : 2.1g
ELECTRICAL CHA... |
Document |
2SD1410 Data Sheet
PDF 89.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1410 |
INCHANGE |
Silicon NPN Darlington Power Transistor | |
2 | 2SD1410A |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1411 |
Toshiba |
NPN Transistor | |
4 | 2SD1411 |
INCHANGE |
NPN Transistor | |
5 | 2SD1411 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SD1411A |
Toshiba Semiconductor |
NPN Transistor |