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2SD1412 |
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| Part Number | 2SD1412 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(M... |
| Features |
. Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019
at Ic=4A
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VcBO VCEO VeBO
RATING 70 50
UNIT
*sJ
Ii-t Je5
O
iri
0> CS
+1
o s Hto
1
1.2
N' 1.4
+ 0.25 id Q76-ai5 , II i
—2.54±0.25
2.54±a25
»M s
CiC5
+1
Collector Current
IC
Base Current
Collector Power Dissipation
Ta=25°C Tc=25 C
Junction Temperature
Storage Temperature Range
IB PC
Ti T stg
ELECTRICAL CHARACTERISTIC (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICB0
... |
| Document |
 2SD1412 Data Sheet
PDF 118.73KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1410 |
Toshiba |
NPN Transistor |
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| 2 | 2SD1410 |
INCHANGE |
Silicon NPN Darlington Power Transistor |
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| 3 | 2SD1410A |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1411 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD1411 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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