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2SD1412 INCHANGE Silicon NPN Power Transistor Datasheet


INCHANGE
2SD1412
Part Number 2SD1412
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplif...
Features R)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 4A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IB1= IB2= 0.3A; RL= 10Ω; VCC= 30V MIN TYP. MAX UNIT 50 V ...

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