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2N5551 Amplifier Transistors

Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA =...
Features = 0 ) 2N5550 2N5551 Emitter
  – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommende...


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