2N5550 |
Part Number | 2N5550 |
Manufacturer | SeCoS |
Description | Elektronische Bauelemente 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high ... |
Features |
Switching and amplification in high voltage Applications such as telephony Low current(max.600mA) High voltage(max.160V)
TO-92
GH
Collector
3
2
Base
1
Emitter
J AD
B K
E CF
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO... |
Document |
2N5550 Data Sheet
PDF 122.36KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N555 |
Motorola |
PNP germanium power transistors | |
2 | 2N5550 |
ON Semiconductor |
Amplifier Transistor | |
3 | 2N5550 |
NTE |
Silicon NPN Transistor | |
4 | 2N5550 |
Motorola |
Amplifier Transistors | |
5 | 2N5550 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | 2N5550 |
Philips |
NPN high-voltage transistors | |
7 | 2N5550 |
CENTRAL SEMICONDUCTOR |
SILICON NPN TRANSISTORS | |
8 | 2N5550 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | 2N5550S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
10 | 2N5551 |
NTE |
Silicon NPN Transistor |