2N5550 |
Part Number | 2N5550 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160... |
Features |
• These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160 Unit Vdc Collector − Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Ju... |
Document |
2N5550 Data Sheet
PDF 88.67KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N555 |
Motorola |
PNP germanium power transistors | |
2 | 2N5550 |
NTE |
Silicon NPN Transistor | |
3 | 2N5550 |
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4 | 2N5550 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | 2N5550 |
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6 | 2N5550 |
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7 | 2N5550 |
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8 | 2N5550 |
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