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2N5550 |
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| Part Number | 2N5550 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector ... |
| Features |
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2N5550 2N5551
Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. 2N5550 2N5551* *Motorola Preferred Device 1 2 3 CASE 29 –04, STYLE 1 TO –92 (TO –226AA) Symbol Min V(BR)CEO 140 160 V(BR)CBO 160 180 V(BR)EBO 6.0 ... |
| Document |
 2N5550 Data Sheet
PDF 118.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N555 |
Motorola |
PNP germanium power transistors |
|
| 2 | 2N5550 |
ON Semiconductor |
Amplifier Transistor |
|
| 3 | 2N5550 |
NTE |
Silicon NPN Transistor |
|
| 4 | 2N5550 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
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| 5 | 2N5550 |
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|
| 6 | 2N5550 |
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| 7 | 2N5550 |
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NPN Transistor |
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| 8 | 2N5550 |
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| 9 | 2N5550S |
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| 10 | 2N5551 |
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