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2N5550S |
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| Part Number | 2N5550S |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Lo... |
| Features |
High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA Low Noise : NF=10dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
160
Collector-Emitter Voltage
VCEO
140
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V mA mA mW
A G H
D
2N... |
| Document |
 2N5550S Data Sheet
PDF 31.54KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | 2N5550 |
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| 2 | 2N5550 |
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| 4 | 2N5550 |
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Desde 2024. D4U Semiconductor.
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