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2N5551 |
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| Part Number | 2N5551 |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Lo... |
| Features |
High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 180 160 6 600 100 625 150
-55 150
UNIT V V V mA mA mW
L M
C
2N5551
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLI... |
| Document |
 2N5551 Data Sheet
PDF 30.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N555 |
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| 2 | 2N5550 |
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| 3 | 2N5550 |
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| 4 | 2N5550 |
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| 5 | 2N5550 |
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| 6 | 2N5550 |
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| 7 | 2N5550 |
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