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2N5551 |
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| Part Number | 2N5551 |
| Manufacturer | Inchange Semiconductor |
| Description | ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5401. isc Product Specification 2N5551 APPLICATIONS ·Designed for Switching and amplification in ... |
| Features |
tor-Emitter Saturation Voltage IC= 10mA; IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain
IC= 10mA; IB= 1mA
IC= 50mA; IB= 5mA VCB= 120V; IE= 0 VCB= 120V; IE= 0 Ta = 100 ℃ VEB= 4V; IC= 0
IC= 1mA ; VCE= 5V
hFE DC Current Gain
IC= 10mA ; VCE= 5V
hFE DC Current Gain
IC= 50mA ; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V
MIN TYP. MAX UNIT 0.15 V 0.2 V 1.0 V 1.0 V 50 nA 50 uA 50 nA
80 80... |
| Document |
 2N5551 Data Sheet
PDF 122.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N555 |
Motorola |
PNP germanium power transistors |
|
| 2 | 2N5550 |
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Amplifier Transistor |
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| 3 | 2N5550 |
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| 4 | 2N5550 |
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| 5 | 2N5550 |
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| 6 | 2N5550 |
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| 7 | 2N5550 |
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| 8 | 2N5550 |
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| 9 | 2N5550 |
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| 10 | 2N5550S |
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Desde 2024. D4U Semiconductor.
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