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AOB095A60L |
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| Part Number | AOB095A60L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max ... |
| Features |
Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
VGS
ID
IDM IAR EAR EAS dv/dt
±30 38 38* 24 24*
152 11 60 480 100
Diode reverse recovery
dv/dt
20
VDS=0 to 400V,IF<=20A,Tj=25°C
di/dt
500
TC=25°C Power Dissipation B Derate above 25°C
PD
378 3.0
41 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
-55 to 150 300
Units V V V
A
A mJ mJ V/ns V/ns A/us W W/°C °C
°C
Thermal Characterist... |
| Document |
 AOB095A60L Data Sheet
PDF 427.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB10B60D |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
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| 2 | AOB10B65M1 |
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|
| 3 | AOB10N60 |
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| 4 | AOB10N60 |
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| 5 | AOB10T60P |
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| 6 | AOB1100L |
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| 7 | AOB1100L |
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| 8 | AOB1100L |
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| 9 | AOB11C60 |
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| 10 | AOB11N60 |
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Desde 2024. D4U Semiconductor.
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