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AOB1100L |
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| Part Number | AOB1100L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost . |
| Features | y L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG Maximum 100 ±20 130 92 208 8 6 122 744 500 250 2.1 1.3 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 0.22 Max 15 60 0.3 Units ° C/W ° C/W ° C/W Rev0: Dec 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://w. |
| Datasheet |
 AOB1100L Data Sheet
PDF 313.42KB |
| Distributor | Stock | Price | Buy |
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AOB1100L |
| Part Number | AOB1100L |
| Manufacturer | Freescale |
| Title | 100V N-Channel Rugged Planar MOSFET |
| Description | The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure . |
| Features | VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 130A < 12mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and St. |
AOB1100L |
| Part Number | AOB1100L |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pluse . |
| Features |
·Drain Current –ID= 130A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11.7mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
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| 2 | AOB11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 3 | AOB11N60 |
INCHANGE |
N-Channel MOSFET |
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| 4 | AOB11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
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| 5 | AOB11S60 |
INCHANGE |
N-Channel MOSFET |
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| 6 | AOB11S60L |
Alpha & Omega Semiconductors |
Power Transistor |
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| 7 | AOB11S65 |
Freescale |
Power Transistor |
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| 8 | AOB11S65 |
Alpha & Omega Semiconductors |
Power Transistor |
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| 9 | AOB11S65 |
INCHANGE |
N-Channel MOSFET |
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| 10 | AOB11S65L |
Alpha & Omega Semiconductors |
650V 11A Power Transistor |
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Desde 2024. D4U Semiconductor.
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