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AOB11S60L |
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| Part Number | AOB11S60L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new a. |
| Features |
AS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RqJA
Maximum Case-to-sink A
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature. S GD AOT11S60L/AOB11S60L 11 8 178 1.4 AOT11S60L/AOB11S60L 65 0.5 0.7 AOB11S60L AOTF11S60 600 ±30 11 * 8 * 45 2 60 120 38 0.3 100 20 -55 to 150 300 A. |
| Datasheet |
 AOB11S60L Data Sheet
PDF 579.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 2 | AOB11S60 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOB11S65 |
Freescale |
Power Transistor |
|
| 4 | AOB11S65 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 5 | AOB11S65 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOB11S65L |
Alpha & Omega Semiconductors |
650V 11A Power Transistor |
|
| 7 | AOB1100L |
INCHANGE |
N-Channel MOSFET |
|
| 8 | AOB1100L |
Freescale |
100V N-Channel Rugged Planar MOSFET |
|
| 9 | AOB1100L |
Alpha & Omega Semiconductors |
100V N-Channel Rugged Planar MOSFET |
|
| 10 | AOB11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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