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AOB11C60 |
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| Part Number | AOB11C60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply de. |
| Features |
anche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC TC=25° C TC=100° C
VGS ID IDM IAR EAR EAS dv/dt PD 278 2.2 11 9
±30 11 * 9 * 80 11 60 750 100 20 50 0.4 -55 to 150 300 AOT11C60/AOB11C60 65 0.5 0.45 AOTF11C60 65 -2.5 A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A . |
| Datasheet |
 AOB11C60 Data Sheet
PDF 387.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB1100L |
INCHANGE |
N-Channel MOSFET |
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| 2 | AOB1100L |
Freescale |
100V N-Channel Rugged Planar MOSFET |
|
| 3 | AOB1100L |
Alpha & Omega Semiconductors |
100V N-Channel Rugged Planar MOSFET |
|
| 4 | AOB11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 5 | AOB11N60 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOB11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 7 | AOB11S60 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | AOB11S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 9 | AOB11S65 |
Freescale |
Power Transistor |
|
| 10 | AOB11S65 |
Alpha & Omega Semiconductors |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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