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AOB10T60P |
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| Part Number | AOB10T60P |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO. |
| Features |
ve avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt J
VDS VGS
ID
IDM IAR EAR EAS
dv/dt
10 6.6
TC=25°C Power Dissipation B Derate above 25°C
PD
208 1.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
AOTF10T60P 600 ±30 10 * 6.6 * 40 10 50 480 50 15 43 0.3 -55 to 150 300 AOTF10T60PL 10 * 6.6 * 33 0.26 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT(B)10T6. |
| Datasheet |
 AOB10T60P Data Sheet
PDF 499.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOB10B60D |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
|
| 2 | AOB10B65M1 |
Alpha & Omega Semiconductors |
10A Alpha IGBT |
|
| 3 | AOB10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |
|
| 4 | AOB10N60 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | AOB1100L |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOB1100L |
Freescale |
100V N-Channel Rugged Planar MOSFET |
|
| 7 | AOB1100L |
Alpha & Omega Semiconductors |
100V N-Channel Rugged Planar MOSFET |
|
| 8 | AOB11C60 |
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11A N-Channel MOSFET |
|
| 9 | AOB11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 10 | AOB11N60 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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