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AOB10N60 |
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| Part Number | AOB10N60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing. |
| Features |
ess
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
10
10 * 7.2 7.2 * 36 4.4 290 580 45 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT10N60/AOB10N60 65 0.5 AOTF10N60 65 -- Maximum Junction-to-Case RqJC 0.5 2.5 * Drain current limited by maximum junction temperature. S Units V V A A mJ mJ V/ns W W. |
| Datasheet |
 AOB10N60 Data Sheet
PDF 554.16KB |
| Distributor | Stock | Price | Buy |
|---|
AOB10N60 |
| Part Number | AOB10N60 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 3. |
| Features |
·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDS. |
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