No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Wing On |
N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET New technology for high voltage device Low RDS(ON) and low conduction losses Small package BVDSS = 650 V Ultra low gate charge cause lower driving requirement 100% avalanche tested RDS(on) = 0.35 Ω |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Ty |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.48 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 27.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.15 Ω (T |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 Ω (Typ |
|
|
|
Wing On |
N-Channel Super Junction MOSFET New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS APPLICATION Power Factor Correction(PFC) Switched mode power suppl |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.1 Ω (Ty |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ. |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.78 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.50 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 22.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.4 Ω (Ty |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.45 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 49.6 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.93 Ω (T |
|
|
|
Wing On |
N-Channel Super Junction MOSFET 100% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V APPLICATION DC Motor control for E-bike & Power t |
|
|
|
Wing On |
N-Channel Super Junction MOSFET New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS APPLICATION Power Factor Correction(PFC) Switched mode power suppl |
|
|
|
Wing On |
N-Channel Super Junction MOSFET 100% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower RDS(ON) : 7.2 mΩ (Typ.) @VGS=10V APPLICATION DC Motor control for E-bike & Power t |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.26 Ω (T |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ |
|
|
|
Wing On |
N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Typ. |
|