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PFP8N50 |
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| Part Number | PFP8N50 |
| Manufacturer | Wing On |
| Description | Sep 2008 PFP8N50/PFF8N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled G... |
| Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFP8N50/PFF8N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) = 0.85 Ω ID = 8.0 A
TO-220
Drain
Gate
● ◀▲ ● ● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source ... |
| Document |
 PFP8N50 Data Sheet
PDF 1.30MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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