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PFP10N60 |
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| Part Number | PFP10N60 |
| Manufacturer | Wing On |
| Description | Nov 2011 PFP10N60 / PFF10N60 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequall... |
| Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.78 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP10N60/PFF10N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.78 Ω ID = 9.5 A
Drain
Gate
● ◀▲ ● ● Source TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Sour... |
| Document |
 PFP10N60 Data Sheet
PDF 1.10MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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