PFP12N65E |
Part Number | PFP12N65E |
Manufacturer | Wing On |
Description | PFP12N65E / PFF12N65E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate ... |
Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.48 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP12N65E/PFF12N65E
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 0.48 Ω ID = 12.2 A
TO-220
Drain
Gate
● ◀▲ ● ● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. So... |
Document |
PFP12N65E Data Sheet
PDF 848.46KB |
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