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PFP10N80E |
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| Part Number | PFP10N80E |
| Manufacturer | Wing On |
| Description | PFP10N80E / PFF10N80E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate ... |
| Features |
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 49.6 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.93 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP10N80E / PFF10N80E
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) = 0.93 Ω ID = 9.6 A
TO-220
Drain
Gate
● ◀▲ ● ● Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Sou... |
| Document |
 PFP10N80E Data Sheet
PDF 922.07KB |
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Desde 2024. D4U Semiconductor.
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