Toshiba Semiconductor D14 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D1408	Toshiba Semiconductor	2SD1408 . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collecto
2	2SD1415A	Toshiba Semiconductor	Silicon NPN Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods)
3	TMD1414-2C	Toshiba Semiconductor	MICROWAVE POWER MMIC AMPLIFIER n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Volt
4	2SD1408	Toshiba Semiconductor	Silicon NPN Transistor . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collecto
5	D1410A	Toshiba Semiconductor	2SD1410A
6	2SD1409A	Toshiba Semiconductor	NPN Transistor c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliabili
7	2SD1410A	Toshiba Semiconductor	Silicon NPN Transistor ngs. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure
8	2SD1411A	Toshiba Semiconductor	NPN Transistor maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estim
9	2SD1430	Toshiba Semiconductor	Silicon NPN Transistor SHIBA 2-16D1A Weight : 5.2g CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current SYMBOL ICBO lEBO TEST CONDITION VCB=500V, I E=0 V EB=5V, I C=0 MIN. - TYP. - MAX. UNIT M 10 1 mA DC Current Gain Collector-Emitter Saturation Voltag
10	2SD1438	Toshiba Semiconductor	Silicon NPN Transistor . High DC Current Gain : hFE=2000(Min.) (VcE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat)=1.5V(Max.) (I C=1A, I B=lmA) INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter
11	D1428	Toshiba Semiconductor	2SD1428 . High Voltage : VcBO=1500V . Low Saturation Voltage . High Speed : V C E(sat)=5V(Max.) (I C=5A, I B=1A) : tf=l. 0/«s(Max. . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±Q2 MAXIMUM RATINGS (Tc=25°C)
12	2SD1407A	Toshiba Semiconductor	Silicon NPN Transistor in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re
13	2SD1412A	Toshiba Semiconductor	Silicon NPN Transistor ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2