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2SD1409A |
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| Part Number | 2SD1409A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: mm • • High DC current gain: hFE = 600 (min.) (VC... |
| Features |
c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector Base ≈ 2.5 kΩ ≈ 200 Ω Emitter
1
2009-12-21
http://www.Datasheet4U.com
2SD1409A
Electrical Characteristics (Ta = 25°C)
Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation v... |
| Document |
 2SD1409A Data Sheet
PDF 231.85KB |
Similar Datasheet
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|---|---|---|---|---|
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