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2SD1412A |
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| Part Number | 2SD1412A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (max) at I... |
| Features |
ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
2SD1412A
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 70 V, IE = 0
I... |
| Document |
 2SD1412A Data Sheet
PDF 154.32KB |
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