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2SD1415A Toshiba Semiconductor Silicon NPN Transistor Datasheet


Toshiba Semiconductor
2SD1415A
Part Number 2SD1415A
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) A...
Features (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD1415A Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector...

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