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| Part Number | 2SD1415A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1415A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switc. |
| Features | stor 2SD1415A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 100 μA IEBO . |
| Part Number | 2SD1415A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta. |
| Features | age Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=3A ;IB=6mA IC=3A ;IB=6mA VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=3V IC=6A ; VCE=3V 2000 1000 MIN 100 0.9 1.5 1.5 2.0 100 3.0 15000 TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switch. |
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Desde 2024. D4U Semiconductor.
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