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2SD1410A |
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| Part Number | 2SD1410A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications Industrial Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE... |
| Features |
ngs.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
Emitter
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
2SD1410A
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance
Sy... |
| Document |
 2SD1410A Data Sheet
PDF 139.89KB |
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