Toshiba C31 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC3112	Toshiba Semiconductor	TRANSISTOR design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2	C3112	Toshiba Semiconductor	2SC3112 design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
3	C3124	Toshiba	2SC3124 .1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 650 1100 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC3124 2 2003-03-19 2SC3124 3 2003-03-19 2SC3124 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the qua
4	C3180	TOSHIBA	2SC3180
5	2SC3121	Toshiba Semiconductor	Silicon NPN Transistor B = 0 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 60 150 320 1100 1500 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC31
6	2SC3138	Toshiba Semiconductor	Silicon NPN Transistor ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabi
7	C3182	Toshiba	2SC3182
8	C3113	Toshiba Semiconductor	2SC3113
9	C3123	Toshiba Semiconductor	2SC3123 oshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics
10	C3120	Toshiba Semiconductor	2SC3120 .6 2400 17 8 Max 0.1 1.0 ¾ 200 0.9 ¾ ¾ ¾ pF MHz dB dB Unit mA mA V VCC = 10 V, IC = 2 mA, f = 800 MHz, fL = 830 MHz (0dBm) (Figure 1) 1 2003-03-19 2SC3120 L1~L4: f0.8 mm silver plated copper wire L5: Air coil SCN-5948 (1)-(3) TOKO or equivalent
11	C3148	Toshiba Semiconductor	2SC3148
12	C3121	Toshiba	2SC3121 B = 0 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 60 150 320 1100 1500 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC31
13	C3122	Toshiba	2SC3122 , IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0.
14	C3138	Toshiba	2SC3138 ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliabi
15	2SC3119	Toshiba	Silicon NPN Transistor . Excellent Forward AGC Characteristics. Unit in mm +a5 2.5 -a3 ci OS -H H + Q25 L5-0.15 T 1 a2 d T~ 1 m a 3 rr 1 HO i MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co
16	2SC3136	Toshiba	Silicon NPN Transistor . High Conversion Gain : G ce =2 3dB (Typ.) . Low Reverse Transfer Capacit ance : C r e=0.4pF (Typ .) — 5.1 MAX 1- Unit in mm ; 0.45 0.5 5 (145 -n rf ii i 1 4 °- 1 - S 01 c5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Co
17	2SC3137	Toshiba	Silicon NPN Transistor 5 - - V DC Current Gain hFE VCE=10V, Ic=5mA 40 100 200 - Reverse Transfer Capacitance Ore VcB=10V, I E=0, f=lMHz - 0.65 0.9 pF Transition Frequency fT V CE=10V, I c =2mA 1500 2400 - MHz Conversion Gain Noise Figure Gee V CC =10V
18	2SC3113	Toshiba Semiconductor	Silicon NPN Transistor , IB = 10 mA fT VCE = 10 V, IC = 10 mA Cob NF (1) NF (2) VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW Note: hFE classification A: 600~1800, B: 1200~3600 Min Typ. Max U
19	2SC3120	Toshiba Semiconductor	Silicon NPN Transistor .6 2400 17 8 Max 0.1 1.0 ¾ 200 0.9 ¾ ¾ ¾ pF MHz dB dB Unit mA mA V VCC = 10 V, IC = 2 mA, f = 800 MHz, fL = 830 MHz (0dBm) (Figure 1) 1 2003-03-19 2SC3120 L1~L4: f0.8 mm silver plated copper wire L5: Air coil SCN-5948 (1)-(3) TOKO or equivalent
20	2SC3122	Toshiba Semiconductor	Silicon NPN Transistor , IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0.