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2SC3113 |
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| Part Number | 2SC3113 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 2SC3113 For Audio Amplifier and Switching Applications Unit: mm · High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V ·... |
| Features |
, IB = 10 mA
fT VCE = 10 V, IC = 10 mA
Cob NF (1)
NF (2)
VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, RG = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW
Note: hFE classification A: 600~1800, B: 1200~3600
Min Typ. Max Unit
¾ ¾ 0.1 mA ¾ ¾ 0.1 mA
600 ¾ 3600
¾ 0.12 0.25
V
100 250 ¾ MHz
¾ 3.5 ¾ pF
¾ 0.5 ¾ dB
¾ 0.3 ¾
1 2003-03-25
2SC3113
2 2003-03-25
2SC3113
3 2003-03-25
2SC3113
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can m... |
| Document |
 2SC3113 Data Sheet
PDF 140.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3110 |
Inchange |
Silicon Power Transistor |
|
| 2 | 2SC3112 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 3 | 2SC3114 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC3116 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3117 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SC3117 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3119 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3101 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3102 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC3103 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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