C3138 |
Part Number | C3138 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max)... |
Features |
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1982-10
1
2014-03-01
2SC3138
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-... |
Document |
C3138 Data Sheet
PDF 278.72KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C3130 |
Panasonic |
Silicon NPN Transistor | |
2 | C3135 |
Sanyo |
2SC3135 | |
3 | C3101 |
Mitsubishi Electronics |
2SC3101 | |
4 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 | |
5 | C3112 |
Toshiba Semiconductor |
2SC3112 | |
6 | C3113 |
Toshiba Semiconductor |
2SC3113 | |
7 | C3114 |
Sanyo Semicon Device |
2SC3114 | |
8 | C3116 |
Sanyo |
2SC3116 | |
9 | C3117 |
Sanyo Semicon Device |
2SC3117 | |
10 | C311C |
NEC |
UPC311C |