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C3112 |
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| Part Number | C3112 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications • • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50... |
| Features |
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2... |
| Document |
 C3112 Data Sheet
PDF 487.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3113 |
Toshiba Semiconductor |
2SC3113 |
|
| 2 | C3114 |
Sanyo Semicon Device |
2SC3114 |
|
| 3 | C3116 |
Sanyo |
2SC3116 |
|
| 4 | C3117 |
Sanyo Semicon Device |
2SC3117 |
|
| 5 | C311C |
NEC |
UPC311C |
|
| 6 | C3101 |
Mitsubishi Electronics |
2SC3101 |
|
| 7 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 |
|
| 8 | C3120 |
Toshiba Semiconductor |
2SC3120 |
|
| 9 | C3121 |
Toshiba |
2SC3121 |
|
| 10 | C3122 |
Toshiba |
2SC3122 |
|
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