C3122 |
Part Number | C3122 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage. |
Features | , IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0.45 pF 650 ¾ MHz 24 28 dB 2.0 3.2 dB 4.4 5.1 V Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC at 1.4 V. 1 2003-03-19 2SC3122 L1: RF Coil M-15 T (TOKO Inc.) or equivalent L2: RF Coil M-25 T (TOKO Inc.) or equivalent Figure 1 200 MHz Gpe, NF Test Circuit Marking 2 2003-03-19 2SC3. |
Datasheet |
C3122 Data Sheet
PDF 140.01KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C3120 |
Toshiba Semiconductor |
2SC3120 | |
2 | C3121 |
Toshiba |
2SC3121 | |
3 | C3123 |
Toshiba Semiconductor |
2SC3123 | |
4 | C3124 |
Toshiba |
2SC3124 | |
5 | C3125 |
Toshiba |
2SC3125 | |
6 | C3127 |
Hitachi Semiconductor |
2SC3127 | |
7 | C3101 |
Mitsubishi Electronics |
2SC3101 | |
8 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 | |
9 | C3112 |
Toshiba Semiconductor |
2SC3112 | |
10 | C3113 |
Toshiba Semiconductor |
2SC3113 |