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C3122 |
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| Part Number | C3122 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 ... |
| Features |
, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA
VCE = 12 V, VAGC = 1.4 V, f = 200 MHz
VCC = 12 V, GR = 30dB, f = 200 MHz (Note)
¾ ¾ 30 60 ¾ 400 20 ¾
3.6
¾ 100 nA
¾ 100 nA
¾¾
V
150 300
0.3 0.45 pF
650 ¾ MHz
24 28 dB
2.0 3.2 dB
4.4 5.1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC at 1.4 V.
1 2003-03-19
2SC3122
L1: RF Coil M-15 T (TOKO Inc.) or equivalent L2: RF Coil M-25 T (TOKO Inc.) or equivalent
Figure 1 200 MHz Gpe, NF Test Circuit Marking
2 2003-03-19
2SC3... |
| Document |
 C3122 Data Sheet
PDF 140.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3120 |
Toshiba Semiconductor |
2SC3120 |
|
| 2 | C3121 |
Toshiba |
2SC3121 |
|
| 3 | C3123 |
Toshiba Semiconductor |
2SC3123 |
|
| 4 | C3124 |
Toshiba |
2SC3124 |
|
| 5 | C3125 |
Toshiba |
2SC3125 |
|
| 6 | C3127 |
Hitachi Semiconductor |
2SC3127 |
|
| 7 | C3101 |
Mitsubishi Electronics |
2SC3101 |
|
| 8 | C3102 |
Mitsubishi Electric Semiconductor |
2SC3102 |
|
| 9 | C3112 |
Toshiba Semiconductor |
2SC3112 |
|
| 10 | C3113 |
Toshiba Semiconductor |
2SC3113 |
|
Desde 2024. D4U Semiconductor.
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