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Stanson Technology |
P Channel Enchancement Mode MOSFET z -10V/-3.5A, RDS(ON) = 50m-ohm @VGS = -4.5V z -10V/-3.0A, RDS(ON) = 70m-ohm @VGS = -2.5V z -10V/-2.0A, RDS(ON)= 105m-ohm @VGS=-1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capabil |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET l -40V/-5.0A, RDS(ON) = 37mΩ (Typ.) @VGS = -10V l -40V/-3.0A, RDS(ON) = 51mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design STANSON TECHNO |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET -40V/-3.5A, RDS(ON) = 75mΩ (Typ.) @VGS = -10V -40V/-2.8A, RDS(ON) = 105mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design STANSON TECHNOLOGY 120 |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET -20V/-3.3A, RDS(ON) = 30m-ohm (Typ.) @VGS = -4.5V -20V/-2.8A, RDS(ON) = 40m-ohm @VGS = -2.5V -20V/-2.3A, RDS(ON) = 53m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capabili |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET -30V/-2.6A, RDS(ON) = 95m-ohm (Typ.) @VGS = -10V -30V/-2.0A, RDS(ON) = 125m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3 |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 48mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 90mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23 package d |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 20V/6.0A, RDS(ON) = 22mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 36mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 45mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 60mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum D |
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Stanson Technology |
P Channel Enchancement Mode MOSFET z -20V/-2.8A, RDS(ON) = 120m-ohm @VGS = -4.5V z -20V/-2.0A, RDS(ON) = 170m-ohm @VGS = -2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.G |
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Stanson Technology |
N Channel Enchancement Mode MOSFET z 20V/3.6A, RDS(ON) = 80m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 95m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.Gate 2.So |
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Stanson Technology |
P Channel Enchancement Mode MOSFET z -30V/-2.6A, RDS(ON) = 130m-ohm @VGS = -10V z -30V/-2.0A, RDS(ON) = 180m-ohm @VGS = -4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.Ga |
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Stanson Technology |
P Channel Enhancement Mode MOSFET z 3 D G 1 1.Gate 2.Source S 2 3.Drain z z z z -20V/-2.8A, RDS(ON) = 80mΩ (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 120mΩ @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
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Stanson Technology |
P Channel Enhancement Mode MOSFET z 3 D G 1 1.Gate 2.Source S 2 3.Drain z z z z z -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.) @VGS = -4.5V -15V/-3.0A, RDS(ON) = 55m-ohm @VGS = -2.5V -15V/-2.0A, RDS(ON)= 90m-ohm @VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET ! -60V/-3.0A, RDS(ON) = 160m-ohm @VGS = -10V ! -60V/-1.5A, RDS(ON) = 200m-ohm @VGS = -4.5V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-23 package design 1.Gate 2.Sour |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 40V/3.9A, RDS(ON) = 42mΩ (Typ.) @VGS = 10V 40V/3.5A, RDS(ON) = 53mΩ @VGS = 4.5V 40V/2.0A, RDS(ON) = 75 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package |
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Stanson Technology |
P-Channel Enhancement Mode MOSFET ! -20V/-3.2A, RDS(ON) =45mΩ (Typ.) @VGS = -4.5V ! -20V/-2.0A, RDS(ON) = 53mΩ @VGS = -2.5V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-23 package design 1.Gate 2.Sourc |
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Stanson Technology |
N-Channel Enhancement Mode MOSFET 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drai |
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Stanson Technology |
N Channel Enchancement Mode MOSFET z 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V z 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.Gate 2.So |
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Desde 2024. D4U Semiconductor.
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