ST2302 |
Part Number | ST2302 |
Manufacturer | Stanson Technology |
Description | ST2302 The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power managemen. |
Features | iew, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 ww w.D www.DataSheet4U.com N Channel Enchancement Mode MOSFET 3.6A ST2302 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical 20 +/-12 2.8 2.2 10 1.6 1.25 0.8 150 -55/1. |
Datasheet |
ST2302 Data Sheet
PDF 119.06KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
2 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
3 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
4 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET | |
5 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
6 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET | |
7 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET | |
8 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET | |
9 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET | |
10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |