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ST2301 |
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| Part Number | ST2301 |
| Manufacturer | Stanson Technology |
| Description | ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power managemen. |
| Features | ntain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 ww eet www.DataSheet4U.com P Channel Enchancement Mode MOSFET -2.8A ST2301 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c JA Typical -20 +12 -2.5 -1.5 -10 -1.6 1.25 0.. |
| Datasheet |
 ST2301 Data Sheet
PDF 124.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 4 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 5 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 6 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET |
|
| 7 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 8 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 9 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 10 | ST2305A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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