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ST2305A |
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| Part Number | ST2305A |
| Manufacturer | Stanson Technology |
| Description | ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, othe. |
| Features |
ORDERING INFORMATION Part Number ST2305AS23RG Package SOT-23-3L Part Marking 05YA
※ Process Code : A ~ Z ; a ~ z ※ ST2305AS23RG S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A 2005. V1 P Channel Enhancement Mode MOSFET ST2305A -3.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae T. |
| Datasheet |
 ST2305A Data Sheet
PDF 176.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ST2305 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 2 | ST2300 |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ST2300SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
| 4 | ST2301 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 5 | ST2301A |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 6 | ST2302 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 7 | ST2303 |
Stanson Technology |
P Channel Enchancement Mode MOSFET |
|
| 8 | ST2303SRG |
Stanson Technology |
P-Channel Enhancement Mode MOSFET |
|
| 9 | ST2304 |
Stanson Technology |
N Channel Enchancement Mode MOSFET |
|
| 10 | ST2304SRG |
Stanson Technology |
N-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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